Schottky-barrier induced spin dephasing in spin injection

Details Schottky-barrier induced spin dephasing in spin injection Schottky-barrier induced spin dephasing in spin injection

2005-06-10

arxiv.org/abs/cond-mat/0506251v2

Phys. Rev. B 72, 153301 (2005).

Physics

Condensed Matter

Materials Science

5 pages, 5 figures. Phys. Rev B 72, 2005 (in press)

Scientific paper

10.1103/PhysRevB.72.153301

An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the depletion region and parallel to the injection direction, is very large. This electric field can induce an effective magnetic field due to the Rashba effect and cause strong spin dephasing.

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