Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

Details Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

2010-05-01

arxiv.org/abs/1005.0113v1

Phys. Rev. B 81, 205435 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures, revtex, to appear in PRB

Scientific paper

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$\Omega$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$\Omega$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.

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