Theoretical analysis of the resistively-coupled single-electron transistor

Details Theoretical analysis of the resistively-coupled single-electron transistor Theoretical analysis of the resistively-coupled single-electron transistor

1998-03-03

arxiv.org/abs/cond-mat/9803038v1

Appl. Phys. Lett. 72, 3226 (1998)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages (RevTeX), 4 figures (eps)

Scientific paper

10.1063/1.121557

The operation of resistively-coupled single-electron transistor (R-SET) is
studied quantitatively. Due to the Nyquist noise of the coupling resistance,
degradation of the R-SET performance is considerable at temperatures $T$ as
small as $10^{-3} e^2/C$ (where $C$ is the junction capacitance) while the
voltage gain becomes impossible at $T\agt 10^{-2}e^2/C$.

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