Single-charge devices with ultrasmall Nb/AlOx/Nb trilayer Josephson junctions

Details Single-charge devices with ultrasmall Nb/AlOx/Nb trilayer Josephson junctions Single-charge devices with ultrasmall Nb/AlOx/Nb trilayer Josephson junctions

2004-10-12

arxiv.org/abs/cond-mat/0410288v1

J. Appl. Phys. 97, 054501 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages incl. 2 tables and 11 figures

Scientific paper

10.1063/1.1855399

Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication process includes electron beam lithography, dry etching, anodization, and planarization by chemical-mechanical polishing. The samples were characterized at temperatures down to 25 mK. In general, all junctions are of high quality and their I-U characteristics show low leakage currents and high superconducting energy gap values of 1.35 meV. The characteristics of the transistors and arrays exhibit some features in the subgap area, associated with tunneling of Cooper pairs, quasiparticles and their combinations due to the redistribution of the bias voltage between the junctions. Total island capacitances of the transistor samples ranged from 1.5 fF to 4 fF, depending on the junction sizes. Devices made of junctions with linear dimensions below 100 nm by 100 nm demonstrate a remarkable single-electron behavior in both superconducting and normal state. We also investigated the area dependence of the junction capacitances for transistor and array samples.

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