Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

Details Ultrafast carrier and phonon dynamics in Bi2Se3 crystals Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

2010-10-20

arxiv.org/abs/1010.4265v1

Appl. Phys. Lett. 97, 182102 (2010)

Physics

Condensed Matter

Materials Science

8 pages, 4 figures, accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.3513826

Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron-phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.

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