Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results

Details Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results

2007-02-05

arxiv.org/abs/cond-mat/0702098v1

Eur. Phys. Lett. 77, 37007 (2007)

Physics

Condensed Matter

Superconductivity

7 pages, 3 figures

Scientific paper

10.1209/0295-5075/77/37007

Charge redistribution in high-Tc superconductors due to structural defects or interfaces is known to be crucial for electronic applications as the band structure is modified on a local scale. In order to investigate these effects in more detail, we address the normal-state properties of YBa2Cu3O7 (YBCO) in the vicinity of YBCO-metal interfaces by electronic structure calculations for well relaxed interface configurations. Our findings can be interpreted in terms of a band-bending mechanism complemented by local screening effects. We derive quantitative results for the intrinsic doping of the superconducting CuO2 planes due to the metal interface. In particular, the net charge transfer amounts to 0.13 electrons in favour of each intraplane copper site, which appears to be a typical value for interfaces of high-Tc superconductors, thus opening great possibilities for a systematic optimization of wires and tapes from high-Tc materials.

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