Electronic properties of the doped antiferromagnet on a kagome lattice

Details Electronic properties of the doped antiferromagnet on a kagome lattice Electronic properties of the doped antiferromagnet on a kagome lattice

1999-06-03

arxiv.org/abs/cond-mat/9906041v1

Phys. Rev. B59, 13546 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, Revtex, Three figures are not included, and can be mailed by request

Scientific paper

10.1103/PhysRevB.59.13546

Within the t-J model, we study the electronic properties of the doped antiferromagnet on the kagome lattice based on the framework of the self-consistent mean-field theory. At the half-filling, the spin-liquid ground-state energy per site of the kagome antiferromagnet is Eg/NJ=-0.859, which is in very good agreement with the numerical estimates. Away from the half-filling, the electron photoemission spectroscopy and density of states are discussed, and the results indicate that there is a gap in the normal-state of the system.

Affiliated with

Also associated with

No associations

Rating

Electronic properties of the doped antiferromagnet on a kagome lattice does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electronic properties of the doped antiferromagnet on a kagome lattice, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic properties of the doped antiferromagnet on a kagome lattice will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-710724