Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2009-06-23
Phys. Rev. B 80 (2009) 235317 p.1-22 (merged with 0906.4063)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Sequel to arXiv:0906.4063. 9 pages with 8 figures
Scientific paper
10.1103/PhysRevB.80.235317
A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model. A gate potential applied to the conduction electrons is known to change markedly the transport properties of a quantum dot side-coupled to the conduction path; in the embedded geometry here discussed, a similar potential is shown to affect only quantitatively the temperature dependence of the conductance. As expected, in the Kondo regime the numerical results are in excellent agreement with the mapped conductances. In the mixed-valence regime, the mapping describes accurately the low-temperature tail of the conductance. The mapping is shown to provide a unified view of conduction in the single-electron transistor.
Oliveira Luiz N.
Seridonio Antonio C.
Yoshida Makoto
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