Physics – Condensed Matter – Materials Science
Scientific paper
2009-06-23
Appl. Phys. Lett. 95, 012105 (2009)
Physics
Condensed Matter
Materials Science
Accepted for publication in Appl. Phys. Lett
Scientific paper
We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective spin-orbit interaction acting on 2DEG. We show that spin polarization dephasing is strongly suppressed which is crucial for functionality. The carrier spin precession phase depend linearly on the magnetic spiral helicity. The latter is electrically controllable by virtue of the magento-electric effect. We also suggest a flash-memory device based on this structure.
Berakdar Jamal
Jia Chenglong
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