Physics – Condensed Matter – Materials Science
Scientific paper
2009-08-06
Physica B 404 (2009) 4719--4722
Physics
Condensed Matter
Materials Science
Reported at the 25th International Conference on Defects in Semiconductors, St. Petersburg, Russia, July 20-24, 2009
Scientific paper
10.1016/j.physb.2009.08.118
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(001) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.
Arapkina Larisa V.
Yuryev Vladimir A.
No associations
LandOfFree
Defects of Ge quantum dot arrays on the Si(001) surface does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Defects of Ge quantum dot arrays on the Si(001) surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defects of Ge quantum dot arrays on the Si(001) surface will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-705818