Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

An updated version was mistakenly placed on the arXiv as a new submission. Please navigate to arXiv:1009.1893v1 for the latest

Scientific paper

We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-700861

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.