First-principles modeling of ferroelectric capacitors via constrained-D calculations

Details First-principles modeling of ferroelectric capacitors via constrained-D calculations First-principles modeling of ferroelectric capacitors via constrained-D calculations

2009-08-13

arxiv.org/abs/0908.1813v1

Phys. Rev. B 80, 224110 (2009)

Physics

Condensed Matter

Materials Science

25 pages, 18 figures

Scientific paper

10.1103/PhysRevB.80.224110

First-principles modeling of ferroelectric capacitors presents several technical challenges, due to the coexistence of metallic electrodes, long-range electrostatic forces and short-range interface chemistry. Here we show how these aspects can be efficiently and accurately rationalized by using a finite-field density-functional theory formalism in which the fundamental electrical variable is the displacement field D. By performing calculations on model Pt/BaTiO3/Pt and Au/BaZrO3/Au capacitors we demonstrate how the interface-specific and bulk-specific properties can be identified and rigorously separated. Then, we show how the electrical properties of capacitors of arbitrary thickness and geometry (symmetric or asymmetric) can be readily reconstructed by using such information. Finally, we show how useful observables such as polarization and dielectric, piezoelectric and electrostrictive coefficients are easily evaluated as a byproduct of the above procedure. We apply this methodology to elucidate the relationship between chemical bonding, Schottky barriers and ferroelectric polarization at simple-metal/oxide interfaces. We find that BO2-electrode interfaces behave analogously to a layer of linear dielectric put in series with a bulk-like perovskite film, while a significant non-linear effect occurs at AO-electrode interfaces.

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