Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures

Details Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures

2006-06-07

arxiv.org/abs/cond-mat/0606182v1

Physics

Condensed Matter

Materials Science

17 pages, 3 figures

Scientific paper

LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.

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