Magnetic defects promote ferromagnetism in Zn1-xCoxO

Details Magnetic defects promote ferromagnetism in Zn1-xCoxO Magnetic defects promote ferromagnetism in Zn1-xCoxO

2005-12-05

arxiv.org/abs/cond-mat/0512101v1

Physics

Condensed Matter

Materials Science

9 pages, 11 figures

Scientific paper

Experimental studies of Zn1-xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p- or n-type doping of Zn1-xCoxO can change its magnetic state. Bulk Zn1-xCoxO with a low defect density and x in the range used in experimental thin film studies exhibits ferromagnetism only at very low temperatures. Therefore defects in thin film samples or nanocrystals may play an important role in promoting magnetic interactions between Co ions in Zn1-xCoxO. The electronic structures of Co substituted for Zn in ZnO, Zn and O vacancies, substituted N and interstitial Zn in ZnO were calculated using the B3LYP hybrid density functional in a supercell. The B3LYP functional predicts a band gap of 3.34 eV for bulk ZnO, close to the experimental value of 3.47 eV. Occupied minority spin Co 3d levels are at the top of the valence band and unoccupied levels lie above the conduction band minimum. Majority spin Co 3d levels hybridize strongly with bulk ZnO states. The neutral O vacancy and interstitial Zn are deep and shallow donors, respectively. The Zn vacancy is a deep acceptor and the acceptor level for substituted N is at mid gap. The possibility that p- or n-type dopants promote exchange coupling of Co ions was investigated by computing total energies of magnetic states of ZnO supercells containing two Co ions and an oxygen vacancy, substituted N or interstitial Zn in various charge states. The neutral N defect and the singly-positively charged O vacancy are the only defects which strongly promote ferromagnetic exchange coupling of Co ions at intermediate range.

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