Magnetotransport properties of a polarization-doped three-dimensional electron slab

Details Magnetotransport properties of a polarization-doped three-dimensional electron slab Magnetotransport properties of a polarization-doped three-dimensional electron slab

2002-09-30

arxiv.org/abs/cond-mat/0209664v2

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.67.153306

We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al$_{x}$Ga$_{1-x}$N semiconductor system. The degenerate free carriers are generated by a novel technique by grading a polar alloy semiconductor with spatially changing polarization. Analysis of the magnetotransport data enables us to extract an effective mass of $m^{\star}=0.19 m_{0}$ and a quantum scattering time of $\tau_{q}= 0.3 ps$. Analysis of scattering processes helps us extract an alloy scattering parameter for the Al$_{x}$Ga$_{1-x}$N material system to be $V_{0}=1.8eV$.

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