Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

Details Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6 Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

2008-04-28

arxiv.org/abs/0804.4387v1

Appl. Phys. Lett. 92, 212905 (2008)

Physics

Condensed Matter

Materials Science

13 pages, 4 figures

Scientific paper

10.1063/1.2929745

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

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