Dense electron-hole plasma in silicon light emitting diodes

Details Dense electron-hole plasma in silicon light emitting diodes Dense electron-hole plasma in silicon light emitting diodes

2008-06-12

arxiv.org/abs/0806.2050v2

Physics

Condensed Matter

Other Condensed Matter

7 pages, 4 figures, submitted to Journal of Physics: Condensed Matter, accepted for publication in Journal of Physics: Condens

Scientific paper

10.1088/0953-8984/20/48/485209

Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on the diode current and a low energy shift of the emission line in electroluminescence spectra with increasing diode current are explained by the self-compression of injected electron-hole plasma into dense electron-hole plasma drops. Experiments on space scanning of the electroluminescence intensity of the diodes support this conclusion. The plasma self-compression is explained by existence of an attraction in electron-hole plasma, compensating the plasma pressure. A decrease of the semiconductor energy gap due to a local lattice overheating, produced by the plasma, and the exchange-correlation interaction could contribute to this attraction. The self-focusing of the injection current can accompany the plasma self-compression.

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