Possibility of a Metallic Field-Effect Transistor

Details Possibility of a Metallic Field-Effect Transistor Possibility of a Metallic Field-Effect Transistor

2004-01-09

arxiv.org/abs/cond-mat/0401162v1

Applied Physics Letters vol. 84 (16), p.3139-3141, 19 April 2004

Physics

Condensed Matter

Materials Science

version from 1/11/04

Scientific paper

10.1063/1.1710717

We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunnelling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes electron flow and thus permits transistor action. This type of metallic field effect is advantageous because of the high conductance of the metallic tubes in the ON--state.

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