Physics – Condensed Matter – Materials Science
Scientific paper
2011-06-03
Inst. Phys. Conf. Ser. 149 (1996) 263-268
Physics
Condensed Matter
Materials Science
DRIP-VI, 1995
Scientific paper
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called "bulk" photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the "bulk" excitation, the spectra are much more informative. The interband excited spectra of all the samples investigated in the present work are practically identical, whereas the bulk excited PL spectra are different for different samples and excitation depths and provide the information on the deep-level point defect composition of the bulk materials.
Fedoseyev V. G.
Kalinushkin V. P.
Repeyev Yu. A.
Yuryev Vladimir A.
Zayats Anatoly V.
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