Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

Details Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

2011-10-28

arxiv.org/abs/1110.6319v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, a report to MIEL 2012

Scientific paper

Based on diffusion-drift approximation a version of analytic compact model
for large-area double-gate graphene field-effect transistor is presented. As
parts of the model, the electrostatics of double-gate structure is described
and a unified phenomenological approach for modeling of the two drain current
saturation modes is proposed.

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