Signatures of topology in ballistic bulk transport of HgTe quantum wells

Details Signatures of topology in ballistic bulk transport of HgTe quantum wells Signatures of topology in ballistic bulk transport of HgTe quantum wells

2009-12-17

arxiv.org/abs/0912.3397v1

Phys. Rev. B 81, 241303(R) (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditions the bulk contribution can dominate the edge contribution which makes it essential to fully understand the former for the interpretation of future experiments in clean samples.

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