Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

Details Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

2009-01-21

arxiv.org/abs/0901.3210v1

New Journal of Physics 10 (2008) 073001 (9pp)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 7 figures

Scientific paper

10.1088/1367-2630/10/7/073001

We use lithographically induced strain relaxation to periodically modulate
the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral
magnetoresistance device where two non-volatile magnetic states exist at zero
external magnetic field with resistances resulting from the orientation of two
lithographically defined regions in a single and contiguous layer.

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