Photo-excited zero-resistance states in the GaAs/AlGaAs system

Details Photo-excited zero-resistance states in the GaAs/AlGaAs system Photo-excited zero-resistance states in the GaAs/AlGaAs system

2005-04-08

arxiv.org/abs/cond-mat/0504206v1

International Journal of Modern Physics B 18, 3473 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 color figures, 5 pages

Scientific paper

10.1142/S0217979204026858

The microwave-excited high mobility two-dimensional electron system exhibits,
at liquid helium temperatures, vanishing resistance in the vicinity of $B =
[4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an
effective mass, e is the charge, and \textit{f} is the microwave frequency.
Here, we summarize some experimental results.

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