Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism

Details Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism

2008-02-14

arxiv.org/abs/0802.2061v1

Physics

Condensed Matter

Materials Science

4 pages plus 2 figures, accepted for publication in Physical Review B

Scientific paper

10.1103/PhysRevB.77.113205

We demonstrate sensitivity of the Mn 3d valence states to strain in the ferromagnetic semiconductors (Ga,Mn)As and (Al,Ga,Mn)As, using x-ray magnetic circular dichroism (XMCD). The spectral shape of the Mn $L_{2,3}$ XMCD is dependent on the orientation of the magnetization, and features with cubic and uniaxial dependence are distinguished. Reversing the strain reverses the sign of the uniaxial anisotropy of the Mn $L_3$ pre-peak which is ascribed to transitions from the Mn 2p core level to p-d hybridized valence band hole states. With increasing carrier localization, the $L_3$ pre-peak intensity increases, indicating an increasing 3d character of the hybridized holes.

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