Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices

Details Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices

2012-04-16

arxiv.org/abs/1204.3515v1

Physics

Condensed Matter

Materials Science

Scientific paper

Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are connected anti-serially. Here we report a tantalum-oxide based resistive memory that achieves the complementary switching functionality within a single memory cell. The complementary switching effect is accompanied by switching polarity reversal in different voltage bias regimes. These effects were explained by the redistribution of oxygen vacancies inside the tantalum-oxide layers. The effects of symmetry breaking on bipolar switching and complementary switching were also discussed.

Affiliated with

Also associated with

No associations

Rating

Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-6825