Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

Details Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

2005-09-14

arxiv.org/abs/cond-mat/0509375v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages including 2 figures

Scientific paper

This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, $300 K$, and is also increased by about 23% over that associated with temperature of 500 K.

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