Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

Details Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

2010-03-08

arxiv.org/abs/1003.1614v2

J. Appl. Phys. 108, 063711 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1063/1.3488623

Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This unique feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons.

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