Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

Details Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

2010-03-08

arxiv.org/abs/1003.1534v2

Phys. Rev. Lett. 105, 176602 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures.

Scientific paper

10.1103/PhysRevLett.105.176602

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

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