High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

Details High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

2011-09-15

arxiv.org/abs/1109.3328v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

17 pages, 6 figures; ACS Nano 2011

Scientific paper

10.1021/nn202293f

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 {\mu}m and few tens of flakes with larger size. 60-70% of the flakes have negligible D peak. We show that it is possible to easily transfer the flakes by wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is of the order of 6000 cm^2/V s (at carrier concentration of 10^12 cm^-2), which is typical for devices prepared on this substrate with exfoliated graphene.

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