Mobility and Saturation Velocity in Graphene on SiO2

Details Mobility and Saturation Velocity in Graphene on SiO2 Mobility and Saturation Velocity in Graphene on SiO2

2010-05-15

arxiv.org/abs/1005.2711v2

Appl. Phys. Lett. 97, 082112 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3483130

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.

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