Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

Details Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

2002-07-06

arxiv.org/abs/cond-mat/0207178v1

Phys. Rev. B 66, 100408(R) (2002)

Physics

Condensed Matter

Materials Science

14 pages, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.66.100408

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a V^1/2 dependence of the conductance, indicating a correlation gap in the density of states of GaMnAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

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