Physics – Condensed Matter – Materials Science
Scientific paper
2011-08-10
Appl.Phys.Lett.88:262901,2006
Physics
Condensed Matter
Materials Science
Scientific paper
10.1063/1.2216898
We have demonstrated a technique capable of in-line measurement of dielectric constant of low-k interconnect films on patterned wafers utilizing a test key of ~50x50 \mu m in size. The test key consists of a low-k film backed by a Cu grid with >50% metal pattern density and <250 nm pitch, which is fully compatible with the existing dual-damascene interconnect manufacturing processes. The technique is based on a near-field scanned microwave probe and is noncontact, noninvasive, and requires no electrical contact to or grounding of the wafer under test. It yields <0.3% precision and 2% accuracy for the film dielectric constant.
Scherz André
Schwartz Richard A.
Talanov Vladimir V.
No associations
LandOfFree
Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-665849