Microscopic Property of Amorphous Semiconductor Metal Oxide InGaZnO$_{4}$ and Role of O-deficiency

Details Microscopic Property of Amorphous Semiconductor Metal Oxide InGaZnO$_{4}$ and Role of O-deficiency Microscopic Property of Amorphous Semiconductor Metal Oxide InGaZnO$_{4}$ and Role of O-deficiency

2011-08-10

arxiv.org/abs/1108.2086v2

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

We investigated the microscopic and electronic structures amorphous oxide semiconductors InGaZnO$_{4}$ (a-IGZO) and the role of O-deficiency through the first-principle calculations. The structure of the amorphous oxide is complicated by the admixture of many different kinds of substructures, however it is surprisingly found that the band tail states, which are well-known to be present in the amorphous semiconductors, are few generated for the conduction band minimum (CBM). The electronic structure around CBM is little affected by the disorder and also by the O-deficiency. Free electron carriers can be generated without a creation of donor-level in the O-deficient amorphous oxide.

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