Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles

Details Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles

2011-08-10

arxiv.org/abs/1108.2077v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We evaluate recombination of electrons and holes in optically pumped graphene associated with the interband tunneling between electron-hole puddles and calculate the recombination rate and time. It is demonstrated that this mechanism can be dominant in a wide range of pumping intensities. We show that the tunneling recombination rate and time are nonmonotonic functions of the quasi-Fermi energies of electrons and holes and optical pumping intensity. This can result in hysteresis phenomena.

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