Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

Details Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

2012-01-06

arxiv.org/abs/1201.1439v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3683525

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

Affiliated with

Also associated with

No associations

Rating

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-663070