Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

Details Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

2004-04-21

arxiv.org/abs/cond-mat/0404518v1

Physics

Condensed Matter

Materials Science

Scientific paper

The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.

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