Vibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors

Details Vibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors Vibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors

2007-09-06

arxiv.org/abs/0709.0876v2

Phys. Rev. B 77, 125306 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 6 figures; revised discussion of relation to experiment

Scientific paper

10.1103/PhysRevB.77.125306

Current-driven vibrational non-equilibrium induces vibrational sidebands in single-molecule transistors which arise from tunneling processes accompanied by absorption of vibrational quanta. Unlike conventional sidebands, these absorption sidebands occur in a regime where the current is nominally Coulomb blockaded. Here, we develop a detailed and analytical theory of absorption sidebands, including current-voltage characteristics as well as shot noise. We discuss the relation of our predictions to recent experiments.

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