Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide

Details Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide

2007-09-10

arxiv.org/abs/0709.1402v1

Journal of Physics Condensed Matter / JOURNAL OF PHYSICS-CONDENSED MATTER 19 (2007) 086208

Physics

Condensed Matter

Materials Science

Scientific paper

10.1088/0953-8984/19/8/086208

The recombination of Frenkel pairs resulting from low energy recoils in 3C-SiC has been investigated using first principles and Nudged Elastic Band calculations. Several recombination mechanisms have been obtained, involving direct interstitial migration, atoms exchange, or concerted displacements, with activation energies ranging from 0.65 eV to 1.84 eV. These results are in agreement with experimental activation energies. We have determined the lifetime of the $V_{Si}+Si_{TC}$ Frenkel pair, by computing phonons and the Arrhenius prefactor. The vibrational contributions to the free energy barrier have been shown to be negligible in that case.

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