Disorder-induced phonon self-energy of semiconductors with binary isotopic composition

Details Disorder-induced phonon self-energy of semiconductors with binary isotopic composition Disorder-induced phonon self-energy of semiconductors with binary isotopic composition

2001-07-05

arxiv.org/abs/cond-mat/0107102v1

Physics

Condensed Matter

29 pages, 9 figures, 2 tables, submitted to PRB

Scientific paper

10.1103/PhysRevB.65.075206

Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of the heavier isotope mass x can be explained by taking into account second- and third-order perturbation terms. For elemental semiconductors, the maximum of the self-energy occurs at concentrations with $0.5

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