Magnetic domains in III-V magnetic semiconductors

Details Magnetic domains in III-V magnetic semiconductors Magnetic domains in III-V magnetic semiconductors

2001-06-30

arxiv.org/abs/cond-mat/0107009v2

Phys. Rev. B 64, 241201(R) (2001)

Physics

Condensed Matter

Materials Science

4 RevTex pages, 2 figures spelling of author's names corrected in abstract page

Scientific paper

10.1103/PhysRevB.64.241201

Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width d = 1.1 um for Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].

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