Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures

Details Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures

2006-07-31

arxiv.org/abs/cond-mat/0608006v1

J. Magn. Magn. Mater. 305 (2006) 141

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 3 figures

Scientific paper

10.1016/j.jmmm.2005.12.001

Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs heterostructures. TMR ratios more than 65% are obtained at zero temperature, when one GaAs monolayer ($\approx$ 0.565 nm) is used as a tunnel barrier. It is also shown that the TMR ratio decreases rapidly with increasing the barrier thickness and applied voltage, however at high voltages and low thicknesses, the TMR first increases and then decreases. Our model calculations well explain the main features of the recent experimental observations.

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