Strain-tunable band gap in graphene/h-BN hetero-bilayer

Details Strain-tunable band gap in graphene/h-BN hetero-bilayer Strain-tunable band gap in graphene/h-BN hetero-bilayer

2012-04-10

arxiv.org/abs/1204.2030v1

Journal of Physics and Chemistry of Solids 73 (2012) 818-821

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 8 figures

Scientific paper

10.1016/j.jpcs.2012.02.010

Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.

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