Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

Details Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

2005-01-20

arxiv.org/abs/cond-mat/0501492v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.1949292

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon doping source.

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