Topological p-n Junction

Details Topological p-n Junction Topological p-n Junction

2012-02-08

arxiv.org/abs/1202.1579v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We consider a junction between surface $p$-type and surface $n$-type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such junction setting on topological insulators are fundamental for possible device application. A single gapless chiral edge state localized along the junction interface appears in the presence of an external magnetic field, and it can be probed by scanning tunneling microscopy and transport measurements. We propose to realize this topological \emph{p-n} junction in (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$, which has insulating bulk properties and a tunable surface state across the Dirac cone.

Affiliated with

Also associated with

No associations

Rating

Topological p-n Junction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Topological p-n Junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Topological p-n Junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-63889