Mean-field theory of magnetic properties of Mn$_x$III$_{1-x}$V semiconductors

Details Mean-field theory of magnetic properties of Mn$_x$III$_{1-x}$V semiconductors Mean-field theory of magnetic properties of Mn$_x$III$_{1-x}$V semiconductors

2001-03-16

arxiv.org/abs/cond-mat/0103341v1

Physica E 10, 161 (2001)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, to appear in Physica E

Scientific paper

10.1016/S1386-9477(01)00074-1

We present a mean-field theory of carrier-induced ferromagnetism in Mn$_x$III$_{1-x}$V diluted magnetic semiconductors with a special emphasis placed on the magnetic anisotropy. The valence band holes are described using the six band Kohn-Luttinger model. We find that the magnetic anisotropy is a complicated function of sample parameters such as hole density or strain. Results of our numerical simulations are in agreement with magnetic anisotropy measurements on samples with both compressive and tensile strains.

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