Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates

Details Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates

2002-11-05

arxiv.org/abs/cond-mat/0211073v2

Phys. Rev. B 67, 092509 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

REVTeX4, 3 pages, 3 figures, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.67.092509

We examine the thermodynamic properties of the hole- and electron-doped cuprates by using the t-t'-t''-J model. We find that the chemical potential shows different doping dependence between the hole and electron dopings. Recent experimental data of the chemical potential shift are reproduced except for lightly underdoped region in the hole doping where stripe and/or charge inhomogeneity are expected to be important. The entropy is also calculated as a function of the carrier concentration. It is found that the entropy of the electron-doped system is smaller than that of the hole-doped systems. This is related to strong antiferromagnetic short-range correlation that survives in the electron-doped system.

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