Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure

Details Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure

2004-01-07

arxiv.org/abs/cond-mat/0401100v1

Appl. Phys. Lett. 84, 1383--1385 (2004)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures, to appear in Applied Physics Letters

Scientific paper

10.1063/1.1650872

We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low temperature to incoherent transport in thick barriers at higher temperature is governed by a generalized Thouless energy. The crossover temperature can be estimated from the low temperature resistance of the device and the bulk density of states of the barrier.

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