Quantum effects for ballistic transport in spintronic devices

Details Quantum effects for ballistic transport in spintronic devices Quantum effects for ballistic transport in spintronic devices

2008-02-11

arxiv.org/abs/0802.1436v1

Physics

Condensed Matter

Materials Science

9 pages, 9 figures

Scientific paper

Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This motivates the need to go beyond the usual theoretical approach of semi-classical continuous layers. Here the simple tight-binding dynamics is used to describe quantum conduction in a multicomponent system with spin-polarized electrodes separated by an ultrathin and atomically coherent non-magnetic spacer (either metallic or insulating). A possibility is indicated for obtaining a huge resonant enhancement of magnetoresistance in such device by a special choice of gate voltage on the spacer element.

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