Non-adiabadic charge pumping in a hybrid SET transistor

Details Non-adiabadic charge pumping in a hybrid SET transistor Non-adiabadic charge pumping in a hybrid SET transistor

2008-02-11

arxiv.org/abs/0802.1364v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 included figures

Scientific paper

10.1103/PhysRevLett.101.066801

We study theoretically current quantization in the charge turnstile based on the hybrid (SINIS or NISIN) SET transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper pair - electron cotunneling. The rates of these processes are calculated in the ``above-the-threshold'' regime when they compete directly with the lowest-order tunneling. We show that by shaping the ac gate voltage driving the turnstile, it should be possible to achieve the metrological accuracy of $10^{-8}$, while maintaining the absolute value of the quantized current on the order of 30 pA, just by one turnstile with realistic parameters using aluminium as superconductor.

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