Electro-optical properties of semiconductor quantum dots: Application to quantum information processing

Details Electro-optical properties of semiconductor quantum dots: Application to quantum information processing Electro-optical properties of semiconductor quantum dots: Application to quantum information processing

2001-08-21

arxiv.org/abs/cond-mat/0108334v1

Physics

Condensed Matter

28 pages, 16 Postscript figures. submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.65.075306

A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. More specifically, we investigate the combined effect of static electric fields and ultrafast sequences of multicolor laser pulses in the few-carrier, i.e., low-excitation, regime. In particular, we show how the presence of a properly tailored static field may give rise to significant electron-hole charge separation; these field-induced dipoles, in turn, may introduce relevant exciton-exciton couplings, which are found to induce significant ---both intra- and inter-dot--- biexcitonic splittings. We finally show that such few-exciton systems constitute an ideal semiconductor-based hardware for an all optical implementation of quantum information processing.

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